Title :
SEU/SRAM as a process monitor
Author :
Blaes, Brent R. ; Buehler, Martin G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
The SEU/SRAM is a 4-kbit static random access memory (SRAM) designed to detect single-event upsets (SEU´s) produced by high-energy particles, either in space or on the ground. This device was used to determine the distribution of the memory cell spontaneous flip potential. The variance in this potential was determined to be due to the variation in the threshold voltage of one of the n-FET´s found in the memory cell. For a 1.2-μm CMOS process, the standard deviation of the n-FET VT was found to be 8 mV. This structure provides substantial statistical data; 4096 data points are measured. Using cumulative distribution and residual plots, outlier cells, such as stuck cells and nonnormally distributed cells, are easily identified
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit manufacture; integrated circuit testing; monitoring; process control; production testing; radiation effects; statistical analysis; 1.2 micron; 4 kbit; CMOS process; RADMON; SEU/SRAM; cumulative distribution; faulty cell identification; memory cell spontaneous flip potential; n-FET; nonnormally distributed cells; process monitor; residual plots; single-event upsets; static RAM; static random access memory; stuck cells; threshold voltage; CMOS process; Event detection; Helium; Inverters; Monitoring; Radiation detectors; Random access memory; SRAM chips; Single event upset; Threshold voltage;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
