Characteristics of Transistors Fabricated on Silicon-on-Quartz Prepared Using a Mechanically Initiated Exfoliation Technique

Author

Shi, Xuejie ; Henttinen, K. ; Suni, T. ; Suni, I. ; Wong, Man

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

26

Issue

9

fYear

2005

Firstpage

607

Lastpage

609

Abstract

Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was $\\sim 1072 \\hbox {cm$^2$/}\\hbox {V $\\cdot$ }\\hbox {s}$ , which is $\\sim$ 35% higher than that extracted from reported “universal curve” for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At $\\sim 243 \\hbox {cm$^2$/}\\hbox {V $\\cdot$ }\\hbox {s}$ , no enhancement in hole effective mobility was observed.

Keywords

electron mobility; elemental semiconductors; quartz; semiconductor device manufacture; silicon; substrates; thin film transistors; wafer bonding; MOSFET; Raman spectroscopy; hole effective mobility; ion cutting; low-field electron effective mobility; mechanically initiated exfoliation; mobility enhancement; silicon-on-quartz; single-crystalline silicon thin film; strained silicon; tensile strain; transistors; wafer bonding; Conductivity; Electron mobility; FETs; MOSFETs; Plasma temperature; Semiconductor thin films; Silicon; Substrates; Tensile strain; Wafer bonding; Ion-cutting; MOSFETs; mobility enhancement; silicon-on-quartz (SOQ); strained-silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.853649

Filename

1498973