DocumentCode :
1146852
Title :
Transient characteristics of GaN-based heterostructure field-effect transistors
Author :
Kohn, E. ; Daumiller, Ingo ; Kunze, Mike ; Neuburger, Martin ; Seyboth, M. ; Jenkins, Thomas J. ; Sewell, James S. ; Van Norstand, J. ; Smorchkova, Y. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany
Volume :
51
Issue :
2
fYear :
2003
fDate :
2/1/2003 12:00:00 AM
Firstpage :
634
Lastpage :
642
Abstract :
DC current-switching and power-switching transients of various GaN-based FET structures are investigated. Two different characteristics are compared, namely, thermal and electronic transients. While the thermal transients are mainly reflected in changes in channel carrier mobility, the electronic transients are dominated by charge instabilities caused by the polar nature of the material. The discussion of the electronic transients focuses, therefore, on instabilities caused by polarization-induced image charges. Three structures are discussed, which are: 1) a conventional AlGaN/GaN heterostructure FET; 2) an InGaN-channel FET; and 3) an AlGaN/GaN double-barrier structure. In structures 2) and 3), field-induced image charges are substituted by doping impurities, eliminating this source of related instability. This is indeed observed.
Keywords :
III-V semiconductors; carrier mobility; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device measurement; transient analysis; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; DC current-switching; InGaN; InGaN-channel; channel carrier mobility; doping impurities; double-barrier structure; electronic transients; field-induced image charges; heterostructure field-effect transistors; polarization-induced image charges; power-switching transients; thermal transients; transient characteristics; Aluminum gallium nitride; FETs; Force sensors; Gallium nitride; HEMTs; Laboratories; MODFETs; Polarization; Radio frequency; Transient analysis;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2002.807687
Filename :
1179390
Link To Document :
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