Title :
Linearity characteristics of microwave-power GaN HEMTs
Author :
Nagy, Walter ; Brown, Jeff ; Borges, Ricardo ; Singhal, Sameer
Author_Institution :
Nitronex Corp., Raleigh, NC, USA
fDate :
2/1/2003 12:00:00 AM
Abstract :
The RF linearity of a 9-mm 10-W GaN high electron-mobility transistor (HEMT) grown on a 100-mm silicon substrate is presented. The quantitative results display promising device linearity as measured by intermodulation distortion and adjacent channel power ratio at 2.0 GHz for various power backoff levels and different quiescent points. These initial results demonstrate that larger periphery GaN HEMTs grown on silicon provide device linearity commensurate with current semiconductor device technology used for power-amplifier applications.
Keywords :
III-V semiconductors; UHF field effect transistors; gallium compounds; intermodulation distortion; microwave power transistors; power HEMT; wide band gap semiconductors; 10 W; 100 mm; 2.0 GHz; 9 mm; GaN; RF linearity; adjacent channel power ratio; intermodulation distortion; linearity characteristics; microwave-power HEMTs; power backoff levels; quiescent points; Displays; Distortion measurement; Gallium nitride; HEMTs; Linearity; MODFETs; Microwave devices; Radio frequency; Silicon; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.807684
