Linearity characteristics of microwave-power GaN HEMTs

Author

Nagy, Walter ; Brown, Jeff ; Borges, Ricardo ; Singhal, Sameer

Author_Institution

Nitronex Corp., Raleigh, NC, USA

Volume

51

Issue

2

fYear

2003

fDate

2/1/2003 12:00:00 AM

Firstpage

660

Lastpage

664

Abstract

The RF linearity of a 9-mm 10-W GaN high electron-mobility transistor (HEMT) grown on a 100-mm silicon substrate is presented. The quantitative results display promising device linearity as measured by intermodulation distortion and adjacent channel power ratio at 2.0 GHz for various power backoff levels and different quiescent points. These initial results demonstrate that larger periphery GaN HEMTs grown on silicon provide device linearity commensurate with current semiconductor device technology used for power-amplifier applications.

Keywords

III-V semiconductors; UHF field effect transistors; gallium compounds; intermodulation distortion; microwave power transistors; power HEMT; wide band gap semiconductors; 10 W; 100 mm; 2.0 GHz; 9 mm; GaN; RF linearity; adjacent channel power ratio; intermodulation distortion; linearity characteristics; microwave-power HEMTs; power backoff levels; quiescent points; Displays; Distortion measurement; Gallium nitride; HEMTs; Linearity; MODFETs; Microwave devices; Radio frequency; Silicon; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2002.807684

Filename

1179393