Title :
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
Author :
Sun-Jung Kim ; Byung Jin Cho ; Ming Bin Yu ; Ming-Fu Li ; Yong-Zhong Xiong ; Chunxiang Zhu ; Chin, A. ; Dim-Lee Kwong
Author_Institution :
Silicon Nano Device Lab, Nat. Univ. of Singapore, Singapore
Abstract :
A high capacitance density (C/sub density/) metal-insulator-metal (MIM) capacitor with niobium pentoxide (Nb2O5) whose k value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high C/sub density/ of >17 fF/μm2 with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-k dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process.
Keywords :
MIM devices; aluminium compounds; capacitors; dielectric materials; hafnium compounds; niobium compounds; radiofrequency integrated circuits; 1 GHz; 4.2 GHz; Cu-BEOL process; HfO/sub 2/-Al/sub 2/O/sub 3/; HfO/sub 2//Al/sub 2/O/sub 3/ barrier; MIM capacitor; Nb/sub 2/O/sub 5/; capacitor integration; decoupling capacitor; high capacitance density; high-k dielectric; integrated RF bypass; leakage current; metal-insulator-metal RF bypass capacitor; radio frequency integrated circuit; reliability; resonant frequency; Capacitance; Hafnium oxide; High-K gate dielectrics; Leakage current; MIM capacitors; Maintenance; Metal-insulator structures; Niobium compounds; Radio frequency; Resonant frequency; Bypass capacitor; decoupling capacitor; high-; metal–insulator–metal (MIM) capacitor; niobium oxide; radio frequency integrated circuit (RF IC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.854378
