A Simple and Low-Cost Method to Fabricate TFTs With Poly-Si Nanowire Channel

Author

Lin, H.-C. ; Lee, M.-H. ; Su, C.-J. ; Huang, T.Y. ; Lee, C.C. ; Yang, Y.-S.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

9

fYear

2005

Firstpage

643

Lastpage

645

Abstract

A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.

Keywords

biosensors; conducting polymers; microsensors; nanotechnology; nanowires; silicon; thin film transistors; Si; TFT fabrication; bio-logic sensing device; poly-Si nanowire channel; poly-Si sidewall spacer technique; thin-film transistor; Biosensors; Chemical and biological sensors; Etching; Fabrication; Lithography; Manufacturing; Nanobioscience; Nanoscale devices; Sensor phenomena and characterization; Thin film transistors; Nanowires; poly-Si; sensor device; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.853669

Filename

1498985