Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

Author

Wu, Yung-Chun ; Chang, Ting-Chang ; Liu, Po-Tsun ; Chou, Cheng-Wei ; Wu, Yuan-Chun ; Tu, Chun-Hao ; Chang, Chun-Yen

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

9

fYear

2005

Firstpage

646

Lastpage

648

Abstract

This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10^-8 A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

Keywords

conducting polymers; crystallisation; leakage currents; nanowires; nickel; silicon; thin film transistors; Ni; Ni contamination; ON-OFF ratio; Si; carrier field emission; defect; dual gate; grain trap; leakage current reduction; metal-induced lateral crystallization polysilicon TFT; multiple nanowire channel; nickel MILC; polysilicon thin-film transistor; Circuits; Contamination; Crystallization; Grain boundaries; Leakage current; Liquid crystal displays; Nickel; Strips; Thin film transistors; Wire; Dual-gate; metal-induced lateral crystallization (MILC); nanowire; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.854382

Filename

1498986