Title :
1330 V, 67 mΩ·cm2 4H-SiC(0001) RESURF MOSFET
Author :
Kimoto, Tsunenobu ; Kawano, Hiroaki ; Suda, Jun
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
Design and fabrication of 4H-SiC(0001) lateral MOSFETs with a two-zone reduced surface field structure have been investigated. The dose dependencies of experimental breakdown voltage show good agreement with simulation. Through the optimization of implant dose, high-temperature (1700°C) annealing after ion implantation, and reduction of channel length, a breakdown voltage of 1330 V and a low on-resistance of 67 mΩ·cm2 have been obtained. The figure-of-merit (VB2/Ron) of the present device reaches 26 MW/cm2, being the best performance among lateral MOSFETs reported. The temperature dependence of static characteristics is also presented.
Keywords :
annealing; ion implantation; power MOSFET; silicon compounds; 1330 V; 1700 C; 4H-SiC(0001); RESURF MOSFET; SiC; breakdown voltage; channel length reduction; dose dependency; figure-of-merit; high-temperature annealing; implant dose optimization; ion implantation; lateral MOSFET; power MOSFET; power device; reduced surface field structure; silicon carbide; temperature dependence; Annealing; Fabrication; Implants; Ion implantation; MOSFET circuits; Power MOSFET; Power integrated circuits; Silicon carbide; Temperature dependence; Wide band gap semiconductors; Power device; power MOSFET; reduced surface field (RESURF); silicon carbide (SiC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.854371
