Title :
The impact of minority carrier lifetime and carrier concentration on the efficiency of CIGS solar cell
Author :
Fathil, M.F.M. ; Md Arshad, M.K. ; Hashim, U. ; Ruslinda, A. Rahim ; Ayub, R. Mat ; Azman, A.H. ; Nurfaiz, M. ; Kamarudin, M.Z.M. ; Aminuddin, M. ; Munir, A.R.
Author_Institution :
Inst. of Nano Electron. Eng., Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
Abstract :
This paper deals with minority carrier lifetime and carrier concentration of Cu(In, Ga)Se2 (CIGS)-based thin film solar cells with a ZnS(n)/CIGS(p) heterojunction structure. The structure is simulated in commercial numerical simulation and the impact of minority carrier lifetime in the CIGS absorber layer on the open circuit voltage, short circuit current density, fill factor and efficiency of the CIGS solar cell are investigated. The increase of minority carrier lifetime has also increased the CIGS solar cell performance. Similar effects are also observed at different carrier concentrations of CIGS layer. All these simulated results give a helpful indication for a practical fabrication process.
Keywords :
carrier density; minority carriers; numerical analysis; solar cells; CIGS-based thin film solar cells; absorber layer; carrier concentration; commercial numerical simulation; fabrication process; fill factor; heterojunction structure; minority carrier lifetime; open circuit voltage; short circuit current density; Charge carrier lifetime; Junctions; Photovoltaic cells; Short-circuit currents; Silicon; Spontaneous emission; Zinc oxide; CIGS; carrier concentration; efficiency; fill factor; minority carrier lifetime; open circuit voltage; short circuit current density; solar cell;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920786
