Title :
1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth
Author :
Berger, Paul R. ; Dutta, Niloy K. ; Humphrey, Dexter A. ; Smith, Peter R. ; Wang, Shuenn-Jyi ; Montgomery, R.K. ; Sivco, D. ; Cho, A.Y.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
A single-stage integrating front-end photoreceiver comprising a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As MODFET using MBE regrowth was investigated. Cutoff frequencies of the 1.0- mu m regrown MODFETs were f/sub t/=24 GHz and f/sub max/=50 GHz. Transconductances of the regrown MODFETs were as high as 495 mS/mm with a current density (I/sub ds/) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -29.6 dBm for BER 10/sup -9/ using 1.55- mu m excitation. The single-stage amplifier exhibited up to 25 dB of flatband gain of the photocurrent.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodetectors; photodiodes; receivers; 1 GHz; 1 Gbit/s; 1.55 micron; 24 GHz; 50 GHz; IR; In/sub 0.65/Ga/sub 0.35/As-In/sub 0.52/Al/sub 0.48/As; MBE regrowth; bit rate sensitivity; current density; flatband gain; molecular beam epitaxial regrowth; monolithic p-i-n MODFET photoreceiver; photocurrent; pseudomorphic; selectively regrown; semiconductors; single-stage amplifier; single-stage integrating front-end photoreceiver; transconductances; Bandwidth; Bit error rate; Bit rate; Current density; Cutoff frequency; Gain; HEMTs; MODFETs; PIN photodiodes; Photoconductivity;
Journal_Title :
Photonics Technology Letters, IEEE
