Correlation between the microstructure of copper oxide thin film and its gas sensing response

Author

Low, Jia Wei ; Nayan, Nafarizal ; Sahdan, Mohd Zainizan ; Ahmad, Mohd Khairul ; Shakaff, A.Y.M. ; Zakaria, A. ; Zain, Ahmad Faizal Mohd

Author_Institution

Microelectron. & Nanotechnol. - Shamsuddin Res. Centre (MiNT-SRC), Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

32

Lastpage

35

Abstract

Copper oxide gas sensor was prepared on silicon wafer by sputtering of copper target at different oxygen flow rate of 0, 4, 8 and 16 sccm using RF magnetron sputtering technique. Argon flow rate, RF power, working pressure and substrate bias voltage were fixed at 50 sccm, 400 W, 22.5 mTorr and -40 V, respectively. The effect of varying the oxygen flow rate towards the time response of the copper oxide gas sensor was investigated. In addition, the influence of the copper oxide thin films microstructure and I-V characteristic was also considered. Based on the result, copper oxide gas sensor fabricated at 8 sccm of oxygen flow rate provide a better response of 0.024V/s compare to those fabricated at 0, 4 and 16 sccm.

Keywords

argon; copper compounds; gas sensors; microfabrication; microsensors; oxygen; sputter deposition; thin film sensors; Ar; CuO; I-V characteristics; O; RF magnetron sputtering technique; argon flow rate; copper oxide thin film microstructure; copper target sputtering; gas sensor; oxygen flow rate; power 400 W; pressure 22.5 mtorr; voltage -40 V; Copper; Gas detectors; Microstructure; Radio frequency; Sputtering; Surface treatment; Time factors; copper oxide; gas sensor; sputtering; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920788

Filename

6920788