Title :
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
Author :
Lin, Hong-Nien ; Chen, Hung-Wei ; Ko, Chih-Hsin ; Ge, Chung-Hu ; Lin, Horng-Chih ; Huang, Tiao-Yuan ; Lee, Wen-Chin
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs are reported for the first time. Channel backscattering ratio increases and decreases under uniaxial tensile and compressive strain, respectively. It is found that in sub-100-nm devices, strain-induced modulation of carrier mean-free path for backscattering and reduction in kBT layer thickness are responsible for the different behaviors of backscattering ratio. Nevertheless, the source-side injection velocity improves irrespective of the strain polarities. The impact of channel backscattering ratio on drive current is also analyzed in terms of ballistic efficiency and injection velocity.
Keywords :
CMOS integrated circuits; MOSFET; backscatter; ballistic transport; compressive strength; nanoelectronics; tensile strength; backscattering ratio; ballistic efficiency; carrier mean-free path; channel backscattering; compressive strain; drive current; kBT layer thickness; source-side injection velocity; strain-induced modulation; uniaxial tensile strain; uniaxially strained nanoscale CMOSFET; Backscatter; Ballistic transport; CMOSFETs; Capacitive sensors; MOSFETs; Scattering; Substrates; Tensile strain; Tensile stress; Uniaxial strain; MOSFETs; scattering; uniaxial strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.853640
