DocumentCode
1147128
Title
Evidence of reduced self-heating in strained Si MOSFETs
Author
Nicholas, Gareth ; Grasby, Tim J. ; Parker, Evan H.C. ; Whall, Terry E. ; Skotnicki, Thomas
Author_Institution
Dept. of Phys., Warwick Univ., Coventry, UK
Volume
26
Issue
9
fYear
2005
Firstpage
684
Lastpage
686
Abstract
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of the data at elevated temperatures, the thermal resistances of the devices are extracted. These are found to be considerably lower than that obtained with a widely used theory. Thermal device simulations demonstrate that the discrepancy is due to an additional conduction path through the field oxide to overlapping aluminum contacts.
Keywords
Ge-Si alloys; MOSFET; aluminium; elemental semiconductors; heating; thermal resistance; Al; SiGe; conduction path; field oxide; overlapping aluminum contact; pulsed measurement; reduced self-heating; strained Si MOSFET; strained silicon; thermal device simulation; thermal resistance; CMOS technology; Electrical resistance measurement; Fabrication; Germanium silicon alloys; MOSFETs; Pulse measurements; Silicon germanium; Temperature measurement; Thermal conductivity; Thermal resistance; MOSFET; SiGe; self-heating; strained silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.854385
Filename
1498999
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