DocumentCode :
1147160
Title :
A new oxide trap-assisted NBTI degradation model
Author :
Jha, Neeraj K. ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
Volume :
26
Issue :
9
fYear :
2005
Firstpage :
687
Lastpage :
689
Abstract :
Using detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping of hydrogen species in the oxide. A new oxide trap-assisted NBTI degradation model is proposed and shown to fit the experimental data very well. Our proposed model can also be used to explain the recently observed phenomenon of higher NBTI degradation for increasing nitrogen concentration in the oxide. We show from numerical calculations that, for higher nitrogen concentration at the interface, one would expect higher NBTI degradation, as also reported recently.
Keywords :
MOSFET; electron traps; particle traps; semiconductor device models; surface diffusion; thermal stability; thermal stresses; hydrogen diffusion; hydrogen trapping; interface composition; interface trap generation; negative bias temperature instability; nitrogen concentration; numerical calculation; oxide trap-assisted NBTI degradation model; stress time; Degradation; Dielectrics; Equations; Hydrogen; MOS devices; Negative bias temperature instability; Niobium compounds; Nitrogen; Stress; Titanium compounds; Hydrogen diffusion; interface trap generation; negative bias temperature instability (NBTI); oxide trap;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.854389
Filename :
1499000
Link To Document :
بازگشت