• DocumentCode
    1147160
  • Title

    A new oxide trap-assisted NBTI degradation model

  • Author

    Jha, Neeraj K. ; Rao, V. Ramgopal

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
  • Volume
    26
  • Issue
    9
  • fYear
    2005
  • Firstpage
    687
  • Lastpage
    689
  • Abstract
    Using detailed experimental data, we demonstrate that for the correct interpretation of negative bias temperature instability (NBTI) degradation behavior with stress time, it is essential to include the effect of trapping of hydrogen species in the oxide. A new oxide trap-assisted NBTI degradation model is proposed and shown to fit the experimental data very well. Our proposed model can also be used to explain the recently observed phenomenon of higher NBTI degradation for increasing nitrogen concentration in the oxide. We show from numerical calculations that, for higher nitrogen concentration at the interface, one would expect higher NBTI degradation, as also reported recently.
  • Keywords
    MOSFET; electron traps; particle traps; semiconductor device models; surface diffusion; thermal stability; thermal stresses; hydrogen diffusion; hydrogen trapping; interface composition; interface trap generation; negative bias temperature instability; nitrogen concentration; numerical calculation; oxide trap-assisted NBTI degradation model; stress time; Degradation; Dielectrics; Equations; Hydrogen; MOS devices; Negative bias temperature instability; Niobium compounds; Nitrogen; Stress; Titanium compounds; Hydrogen diffusion; interface trap generation; negative bias temperature instability (NBTI); oxide trap;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.854389
  • Filename
    1499000