Title :
High power AlGaAs-GaAs visible diode lasers
Author :
Tihanyi, P.L. ; Jain, F.C. ; Robinson, M.J. ; Dixon, J.E. ; Williams, J.E. ; Meehan, K. ; O´Neill, M.S. ; Heath, L.S. ; Beyea, D.M.
Author_Institution :
Dept. of Electr. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
A high-power room-temperature AlGaAs graded index separately confined heterostructure (GRINSCH) laser emitting in the visible spectral regime (/spl sime/715 nm) is reported for the first time. The device is gain-guided and consists of 12 stripes, each 5 μm in width with a centerline separation of 9 μm. This high-power visible laser has been successfully fabricated using a GaAlAs active layer. The epitaxial layer was grown with significantly lower levels of oxygen compared to those grown using standard metalorganic sources. Threshold currents of 310 mA at 10/spl deg/C were routinely measured on uncoated devices. The uncoated device had a catastrophic optical damage limit of 540 mW and has a slope efficiency as high as 0.48. No degradation in device performance was observed during a 50-hour 150-mW burn-in.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical waveguides; semiconductor epitaxial layers; semiconductor lasers; AlGaAs-GaAs; GaAlAs active layer; burn-in; catastrophic optical damage limit; centerline separation; device performance; epitaxial layer; gain-guided; graded index separately confined heterostructure laser; high power AlGaAs-GaAs visible diode lasers; slope efficiency; standard metalorganic sources; threshold currents; uncoated devices; visible spectral regime; Artificial intelligence; Current measurement; Diode lasers; Epitaxial layers; Gallium arsenide; Gettering; Optical materials; Oxygen; Threshold current; Zinc;
Journal_Title :
Photonics Technology Letters, IEEE
