Title :
Impedance, modulation response, and equivalent circuit of ultra-high-speed In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers with p-doping
Author :
Weisser, S. ; Esquivias, I. ; Tasker, P.J. ; Ralston, J.D. ; Rosenzweig, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
7/1/1994 12:00:00 AM
Abstract :
On-wafer measurements of the frequency-dependent impedance, modulation response, and RIN power spectra of ultra-high-speed p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers are presented and analyzed. The experimental results are shown to be accurately modeled by an equivalent circuit which accounts for both the carrier transport/capture dynamics and the junction space-charge capacitance. We find that the carrier escape time out of the QW´s in our laser structure is much larger. Than the carrier capture time, and therefore the interplay between carrier capture and re-emission is not affecting the high-speed modulation dynamics. On the other hand, the absolute values of both the carrier capture time and the space-charge capacitance still limit the modulation bandwidth.<>
Keywords :
III-V semiconductors; capacitance; carrier mobility; equivalent circuits; gallium arsenide; high-speed optical techniques; indium compounds; laser variables measurement; optical modulation; semiconductor doping; semiconductor lasers; In/sub 0.35/Ga/sub 0.65/As-GaAs; carrier capture time; carrier escape time; carrier transport/capture dynamics; equivalent circuit; frequency-dependent impedance; high-speed modulation dynamics; junction space-charge capacitance; laser structure; modulation bandwidth; modulation response; on-wafer measurements; re-emission; ultra-high-speed p-doped In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers; Capacitance; Equivalent circuits; Frequency measurement; Frequency modulation; Gallium arsenide; Impedance measurement; Laser modes; Power lasers; Power measurement; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
