Title :
Bipolar-FET Combinational Power Transistors for Power Conversion Applications
Author :
Chen, Dan Y. ; Chin, Shaoan A.
Author_Institution :
Virginia Polytechnic Institute and State University
Abstract :
Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).
Keywords :
Bipolar transistors; Breakdown voltage; FETs; Low voltage; NASA; Power conversion; Power transistors; Semiconductor diodes; Switches; Telecommunication switching;
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
DOI :
10.1109/TAES.1984.310534
