Title :
Wavelength conversion in a quantum well polarization insensitive amplifier
Author :
Dubovitsky, S. ; Dapkus, P.D. ; Mathur, A. ; Steier, W.H.
Author_Institution :
Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
Polarization insensitivity of the gain saturation properties of a 1.3 μm semiconductor amplifier with tensile and compressive strain quantum well active region are used to demonstrate a WDM wavelength conversion configuration in which the outputs at the two wavelengths are separated on the basis of polarization. Use of orthogonal polarizations allows operation of a wavelength converter without an optical frequency filter at the output. Alternatively, inherent polarization insensitivity of the device can be used for wavelength conversion of an arbitrarily polarized signal.
Keywords :
gallium arsenide; gallium compounds; indium compounds; internal stresses; laser transitions; light polarisation; optical communication equipment; semiconductor lasers; wavelength division multiplexing; 1.3 mum; InP-InGaAsP; WDM wavelength conversion configuration; arbitrarily polarized signal; compressive strain quantum well active region; gain saturation properties; polarization insensitivity; quantum well polarization insensitive amplifier; semiconductor amplifier; tensile strain quantum well active region; wavelength converter; Frequency conversion; Optical filters; Optical frequency conversion; Optical polarization; Optical saturation; Optical wavelength conversion; Semiconductor optical amplifiers; Stimulated emission; Tensile strain; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
