Integration of LED´s and GaAs circuits by MBE regrowth

Author

Grot, Annette C. ; Psaltis, Demetri ; Shenoy, Krishna V. ; Fonstad, Clifton G., Jr.

Author_Institution

Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA

Volume

6

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

819

Lastpage

821

Abstract

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500/spl deg/C. It is therefore feasible to epitaxially regrow photonic device heterostructures directly on high-density electronic circuits yielding monolithic optoelectronic VLSI circuits. The MBE growth, planarization, and LED fabrication of the first optoelectronic circuit using this novel integration technique are described.<>

Keywords

III-V semiconductors; VLSI; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; semiconductor growth; 500 degC; GaAs; LED fabrication; MBE growth; MOSIS service; electrically stable; fully processed VLSI GaAs MESFET circuit; high-density electronic circuits; integration technique; monolithic optoelectronic VLSI circuits; photonic device heterostructures; planarization; thermal cycles; Electronic circuits; Foundries; Gallium arsenide; Light emitting diodes; MESFET circuits; Molecular beam epitaxial growth; Optical devices; Optical modulation; Stimulated emission; Very large scale integration;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.311465

Filename

311465