A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs

Author

Lee, Robert Giahn-Horng ; Su, Jen-Shien ; Chung, Steve S.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

43

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

81

Lastpage

89

Abstract

Previous studies showed that simultaneous determination of the interface states (Nit) and oxide-trapped charges (Q_ox) in the vicinity of the drain side in MOS devices was rather difficult. A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced Nit and Q_ox is presented. Submicron LDD n-MOS devices were tested and charge pumping measurements were performed. The spatial distributions of both Nit and Q _ox have been justified by two-dimensional (2-D) device simulation of the I-V characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for the experimental LDD-type n-MOS devices

Keywords

MOSFET; electron traps; hot carriers; interface states; semiconductor device models; semiconductor device reliability; 2D device simulation; I-V characteristics; LDD n-MOSFETs; charge pumping measurements; drain current characteristics; drain side; fixed-oxide charge effect; hot-carrier-induced effects; interface states; oxide-trapped charges; spatial distributions; Charge measurement; Charge pumps; Current measurement; Hot carriers; Interface states; MOS devices; Performance evaluation; Stress; Testing; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477596

Filename

477596