Title :
Electrical properties of GeSi surface- and buried-channel p-MOSFETs fabricated by Ge implantation
Author :
Jiang, Hong ; Elliman, Robert G.
Author_Institution :
Microelectron. Res. Center, New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
The electrical properties of surface- and buried-channel p-MOSFETs containing strained GeSi heterostructures synthesized by high-dose Ge implantation and solid phase epitaxial growth have been investigated. Compared with Si control devices on the same chips, GeSi transistors exhibited improved performance: the channel hole mobility and linear transconductance was up to 18% higher for surface-channel GeSi transistors, and up to 12% higher for buried-channel GeSi p-MOSFETs, than for equivalent Si devices. Ion-beam synthesis of GeSi strained layers therefore offers an attractive means for realising improved device performance in conventional Si device structures
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; hole mobility; ion implantation; semiconductor heterojunctions; semiconductor materials; semiconductor technology; silicon; Ge implantation; GeSi strained layers; GeSi-Si; PMOSFET; buried-channel p-MOSFET; channel hole mobility; electrical properties; high-dose implantation; ion-beam synthesis; linear transconductance; p-channel devices; solid phase epitaxial growth; strained GeSi heterostructures; surface-channel p-MOSFET; Capacitive sensors; Epitaxial growth; Germanium silicon alloys; Implants; Ion implantation; MOSFET circuits; Molecular beam epitaxial growth; Silicon germanium; Solids; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
