Title :
Origins and characterization of low-frequency noise in GaAs MESFET´s grown on InP substrates
Author :
Chertouk, Mourad ; Chovet, Alain
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
1/1/1996 12:00:00 AM
Abstract :
An experimental study of the low-frequency noise in GaAs MESFET´s grown on InP substrates is reported. The influence of the biases applied to the gate, backgate, and drain in the ohmic region is investigated in order to identify and characterize the 1/f noise origin. We find that this noise can be explained by carrier number fluctuations in the channel and related to trapping phenomena. The traps responsible for this noise are located near the channel-buffer interface. Moreover, the noise behavior exhibits for a well-defined gate voltage, corresponding to the case where the drain current flows near the channel-buffer interface, a GR-type (Lorentzian) noise spectrum emerging from a quite general 1/f noise. This last spectrum corresponds to a single trap level with a density of NT=1016 cm-3 and a time constant τ=1.8 ms which may be attributed to crystal defects present in the GaAs layers
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; indium compounds; semiconductor device noise; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.8 ms; 1/f noise origin; GR-type noise spectrum; GaAs-InP; InP; MESFETs; backgate bias; carrier number fluctuations; channel-buffer interface; crystal defects; drain bias; drain current; gate bias; low-frequency noise; ohmic region; single trap level; time constant; trapping phenomena; Circuit noise; Epitaxial growth; FETs; Gallium arsenide; Indium phosphide; Integrated circuit technology; Low-frequency noise; MESFETs; Optical fiber communication; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
