Title :
Separation of interface and nonuniform oxide traps by the DC current-voltage method
Author :
Kavalieros, Jack T. ; Sah, Chih-Tang
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
Areally nonuniform distribution of oxide charge gives a significant distortion in the gate capacitance and subthreshold DC drain current versus DC gate voltage characteristics. This distortion prevents a reliable determination of the spatial profile of interface and oxide traps generated when a MOS transistor is subjected to channel hot carrier stress. A new procedure is demonstrated which separates the nonuniform oxide charge distribution from interface traps by combining the analysis of two experimental DC characteristics: the subthreshold drain-current and the DC base recombination current versus the gate voltage
Keywords :
MOSFET; capacitance; electron traps; hole traps; hot carriers; interface states; semiconductor-insulator boundaries; DC base recombination current; DC current-voltage method; DC gate voltage characteristics; MOS transistor; MOSFET; channel hot carrier stress; gate capacitance; interface traps; nonuniform oxide charge distribution; nonuniform oxide traps; spatial profile; subthreshold DC drain current; Capacitance; Electron traps; Hot carriers; Laboratories; Lifting equipment; Silicon; Solid state circuits; Stress; Substrate hot electron injection; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
