Title :
High-power singlemode AlGaInAs/InP 14xx-nm laser for uncooled application
Author :
Li, Jin ; Hohl-AbiChedid, A. ; Rice, A.K. ; Qian, Yi
Author_Institution :
Corning Lasertron, Bedford, MA, USA
fDate :
2/6/2003 12:00:00 AM
Abstract :
360 mW fibre output power and excellent wavelength stability within 0.6 nm over a temperature range from 10 to 70°C in a grating-stabilised AlGalaAs/InP 14xx-nm pump laser is reported. A fibre output power of 300 mW was maintained from 10 to 70°C as the driving current was increased by 36% or 1.34 dB.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser stability; optical pumping; semiconductor lasers; 10 to 70 degC; 300 mW; 360 mW; AlGaInAs-InP; AlGaInAs/InP laser; grating-stabilised pump laser; high-power single mode laser; semiconductor laser; uncooled application; wavelength stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030203
