Title :
Large area MOS-gated power devices using high-current fusible links
Author :
Venkatraman, Prasad ; Baliga, B. Jayant
Author_Institution :
Power Products Div., Motorola Inc., Phoenix, AZ, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
A new approach for improving the yield of large area MOS-gated power devices is described. This approach uses high-current fusible links of aluminum to isolate defective segments from the rest of the device. Unlike previously reported wafer repair techniques, the proposed approach does not require any additional processing. The testing procedure used in this method is suitable for automation and it does not affect the switching speed of the device. Power MOSFET´s and IGBT´s have been successfully fabricated using these fusible links to perform wafer repair
Keywords :
MOS-controlled thyristors; insulated gate bipolar transistors; isolation technology; power MOSFET; semiconductor device testing; semiconductor technology; Al; IGBT; MOS-gated power devices; defective segment isolation; high-current fusible links; large area power devices; power MOSFET; switching speed; testing procedure; wafer repair; Bipolar transistors; Cutoff frequency; Doping profiles; Electron devices; Electron emission; Epitaxial growth; Photonic band gap; Silicon; Solid state circuits; Temperature control;
Journal_Title :
Electron Devices, IEEE Transactions on
