Characteristics of GaAs/AlGaAs HEMT´s fabricated by X-ray lithography

Author

Lafontaine, H. ; Haghiri-Gosnet, A.M. ; Jin, Y. ; Crozat, P. ; Adde, R. ; Chaker, M. ; Pépin, H. ; Rousseaux, F. ; Launois, H.

Author_Institution

INRS-Energie, Varennes, Que., Canada

Volume

43

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

175

Lastpage

178

Abstract

This paper is about the dc and microwave characterization of the first high electron mobility transistors (HEMT´s) realized using X-ray lithography processing. This full field patterning technology is proposed as a way to produce transistors with sub-200 nm gate lengths and high operating frequency. Fully operational devices are demonstrated and characterized. The dc parameters are determined to be comparable to those obtained on similar devices processed with electron beam lithography. A maximum intrinsic transconductance of 575 mS/mm is obtained. This shows that the X-ray radiation does not cause any significant damage to the substrates and that the process developed is viable. Devices with different geometries were tested at microwave frequencies. A current gain cutoff frequency of 70 GHz is measured for the device with the shortest gate-length whereas a maximum oscillation frequency as high as 105 GHz is measured for devices having the lowest gate resistance

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; high electron mobility transistors; microwave field effect transistors; 105 GHz; 70 GHz; GaAs-AlGaAs; HEMTs; X-ray lithography; current gain cutoff frequency; dc parameters; full field patterning technology; gate resistance; intrinsic transconductance; maximum oscillation frequency; microwave characterization; operating frequency; Current measurement; Cutoff frequency; Electrical resistance measurement; Frequency measurement; Gain measurement; Gallium arsenide; HEMTs; MODFETs; Microwave devices; X-ray lithography;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.477612

Filename

477612