Title :
A super low noise AlInAs/InGaAs HEMT processed by selective wet gate recess etching
Author :
Yoshida, Norihiro ; Kitano, Toshihiko ; Yamamoto, Yusaku ; Katoh, T. ; Minami, Hisataka ; Kashiwa, Tatsuya ; Sonoda, Takuji ; Takamiya, S. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
1/1/1996 12:00:00 AM
Abstract :
A 0.15 μm T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performance has been developed using a selective wet gate recess etching. The etching condition for recess formation is optimized and an extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device noise; semiconductor epitaxial layers; 0.15 micron; 0.9 dB; 60 GHz; 7.0 dB; AlInAs-InGaAs; HEMT; RF performance; T-shaped gate; gain; microwave FETs; minimum noise figure; passivated device; selective wet gate recess etching; super low noise device; Fabrication; HEMTs; Indium gallium arsenide; Integrated circuit noise; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
