DocumentCode :
114765
Title :
Performance evaluation of dual-channel armchair graphene nanoribbon field-effect transistor
Author :
Azman, Adila Syaidatul ; Johari, Zaharah ; Ismail, Riyad
Author_Institution :
Dept. of Electron. & Comput. Eng., Univ. Teknol. Malaysia, Shah Alam, Malaysia
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
138
Lastpage :
141
Abstract :
Graphene has become a potential successor to silicon in electronic devices. In this paper, the performance of dual-channel armchair graphene nanoribbon field-effect transistor (AGNR FET) is investigated. Both physical and electrical properties of dual-channel AGNR FET are simulated using Atomistic Tool Kit from Quantum Wise. Their band structures and transmission spectra are analyzed. Current-voltage characteristic is then extracted and the performance of single and dual-channel AGNR FETs is compared. From the simulation, it is found that dual-channel AGNR FET exhibits significant improvement in ON current over two fold. Results obtained will give insight in the implementation of dual-channel AGNR FET for performance enhancement in future electronic devices.
Keywords :
field effect transistors; graphene; nanoribbons; ON current; atomistic tool kit; band structures; current-voltage characteristic; dual-channel armchair graphene nanoribbon field-effect transistor; electrical properties; electronic devices; performance evaluation; physical properties; quantum wise; single channel AGNR FET; transmission spectra; Arrays; Electrodes; Field effect transistors; Graphene; Performance evaluation; Photonic band gap; armchair graphene nanoribbon; dual-channel; field-effect transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Type :
conf
DOI :
10.1109/SMELEC.2014.6920815
Filename :
6920815
Link To Document :
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