• DocumentCode
    1147679
  • Title

    40 Gbit/s low-voltage distributed limiting drivers for optical modulators

  • Author

    Yu, M. ; Lao, Z. ; Lee, S. ; Xu, M. ; Ho, Victor ; Radisic, V. ; Guinn, K. ; Wang, K.C.

  • Author_Institution
    OpNext Inc., Thousand Oaks, CA, USA
  • Volume
    39
  • Issue
    3
  • fYear
    2003
  • fDate
    2/6/2003 12:00:00 AM
  • Firstpage
    301
  • Lastpage
    302
  • Abstract
    The development of a monolithic modulator driver designed on a 0.15 μm GaInAs pHEMT technology for 40 Gbit/s optical communications is presented. The driver consists of a differential limiting predriver and a differential distributed postamplifier to achieve enough gain-bandwidth product. The driver achieves an output of 2.4 V with 0.5 Vpp input.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; differential amplifiers; driver circuits; gallium arsenide; high-speed integrated circuits; indium compounds; optical modulation; optical transmitters; 0.15 micron; 2.4 V; 40 Gbit/s; GaInAs; GaInAs pHEMT technology; LV distributed limiting drivers; differential distributed postamplifier; differential limiting predriver; low-voltage drivers; monolithic modulator driver; optical communications; optical modulators; optical transmitter;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030198
  • Filename
    1179464