DocumentCode
1147719
Title
First demonstration of high-power GaInP/GaAs HBT MMIC power amplifier with 9.9 W output power at X-band
Author
Liu, William ; Khatibzadeh, Ali ; Kim, Tae ; Sweder, Jim
Author_Institution
Corp. R&D Dept., Texas Instrum. Inc., Dallas, TX, USA
Volume
4
Issue
9
fYear
1994
Firstpage
293
Lastpage
295
Abstract
We report for the first time the large-signal power performance of a MMIC amplifier based on GaInP/GaAs HBT´s. A output power of 9.9 W and power-added efficiency of more than 30% are measured at X-band. These results compare favorably with those measured from AlGaAs/GaAs HBT´s, demonstrating that GaInP/GaAs HBT´s are suitable for microwave power applications.<>
Keywords
III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; power amplifiers; 30 percent; 9.9 W; AlGaAs/GaAs; GaInP-GaAs; GaInP/GaAs; HBT MMIC power amplifier; X-band; high-power; large-signal power performance; microwave power applications; output power; power-added efficiency; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Monitoring; Power amplifiers; Power generation; Power measurement; Wet etching;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.311511
Filename
311511
Link To Document