A high efficiency V-band monolithic HEMT power amplifier

Author

Kasody, R.E. ; Dow, G.S. ; Sharma, A.K. ; Aust, M.V. ; Yamauchi, D. ; Lai, R. ; Biedenbender, M. ; Tan, K.L. ; Allen, B.R.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

Volume

4

Issue

9

fYear

1994

Firstpage

303

Lastpage

304

Abstract

We report the performance of a monolithic V-band power amplifier using 0.15-μm double heterostructure pseudomorphic InGaAs/AlGaAs/GaAs HEMT´s. The amplifier using a 400-μm device driving a 2×400-μm device. It has demonstrated output power of 313 mW (0.39 W/mm) with 8.95 dB power gain and 19.9% PAE at 59.5 GHz. These data represent the highest reported combination of output power, power gain, and power-added efficiency reported for a V-band monolithic power amplifier.

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; power amplifiers; 0.15 mum; 313 mW; 400 mum; 59.5 GHz; 8.95 dB; InGaAs-AlGaAs-GaAs; InGaAs/AlGaAs/GaAs HEMT´s; V-band monolithic HEMT power amplifier; double heterostructure; high efficiency; output power; power gain; power-added efficiency; pseudomorphic; Driver circuits; Frequency; HEMTs; High power amplifiers; Impedance; Indium gallium arsenide; Power amplifiers; Power generation; Semiconductor device measurement; Testing;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.311515

Filename

311515