Impact of implantation methods on speed and accuracy trade-off in calibrated TCAD tool

Analytical-based and Monte Carlo-based are two methods available in TCAD for simulation of ion implantation step. This paper presents a selection of suitable implantation methods considering the speed and accuracy trade-off while fulfilling the calibrated TCAD requirements in MOSFET process and device simulations. Doping profiles from several device physicals such as channel, halo and source-drain structures are acquired to capture the impact of different implantation methods. The comparisons between measured and simulated doping profiles are presented to further investigate the trade-off as a function of energy levels and tilt angles. The best solution is proposed to obtain essentially calibrated TCAD simulation, without unnecessarily scarifying the simulation time.