• DocumentCode
    1147834
  • Title

    Analog-to-digital converter based on single-electron tunneling transistors

  • Author

    Hu, Chaohong ; Cotofana, Sorin Dan ; Jiang, Jianfei ; Cai, Qiyu

  • Author_Institution
    Shanghai Jiao Tong Univ., China
  • Volume
    12
  • Issue
    11
  • fYear
    2004
  • Firstpage
    1209
  • Lastpage
    1213
  • Abstract
    A novel single-electron tunneling transistors (SETTs) based analog-to-digital converter (ADC) is proposed in this paper. The scheme we propose fully utilizes Coulomb oscillation effect, can properly operate at T>0 K, and only a capacitive divider (built with 2n-2 capacitors) and n pairs of complementary SETTs are required for an n-bit ADC implementation. When compared with other state-of-the-art SET based ADCs our method provides the most compact solution measured in terms of circuit elements and has a potential advantage in terms of conversion speed. To illustrate the operation of the proposed scheme, a 4-bit ADC is demonstrated at 10K by means of simulation.
  • Keywords
    Coulomb blockade; analogue-digital conversion; circuit simulation; single electron transistors; 4 bit; ADC; Coulomb oscillation effect; analog to digital converter; capacitive divider; circuit simulation; complementary transistor; single electron tunneling transistors; state of the art; Analog-digital conversion; Capacitance; Capacitors; Chaos; Circuits; Laboratories; Single electron transistors; Temperature; Tunneling; Velocity measurement; Analog-to-digital conversion (ADC); circuit modeling; semiclassical method; single-electron tunneling;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2004.836313
  • Filename
    1350793