Title :
Silicon-on-Insulator CWDM Power Monitor/Receiver With Integrated Thin-Film InGaAs Photodetectors
Author :
Brouckaert, J. ; Roelkens, G. ; Selvaraja, S.K. ; Bogaerts, W. ; Dumon, P. ; Verstuyft, S. ; Van Thourhout, D. ; Baets, R.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Ghent, Belgium
Abstract :
In this letter, we demonstrate a compact and cost-effective four-channel demultiplexer with integrated photodetectors for application in coarse wavelength-division-multiplexing systems. The device consists of a silicon-on-insulator planar concave grating (PCG) demultiplexer and heterogeneously integrated InAlAs-InGaAs metal-semiconductor-metal photodetectors, and has a footprint of only 0.1 mm2 . The PCG and integrated photodetectors have a responsivity of 0.6 A/W for TE-polarized light. The integrated device has an optical crosstalk of -25 dB.
Keywords :
III-V semiconductors; aluminium compounds; demultiplexing equipment; diffraction gratings; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; silicon; silicon-on-insulator; wavelength division multiplexing; CWDM power monitor/receiver; InAlAs-InGaAs; Si; TE-polarized light; coarse wavelength-division-multiplexing systems; four-channel demultiplexer; metal-semiconductor-metal photodetectors; optical crosstalk; planar concave grating demultiplexer; silicon-on-insulator; thin-film photodetectors; Demultiplexing; heterogeneous integration; photodetector; silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2027999
