Title :
Spice model design for carbon nanotube field effect transistor (CNTFET)
Author :
Farhana, Soheli ; Zahirul Alam, A.H.M. ; Khan, Sharifullah
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
Abstract :
In this paper, the design of SPICE circuit model has been discussed for Carbon Nanotube Field Effect Transistor (CNTFET) and predict device high frequency performance. An enhancement mode SPICE circuit model for nanotube transistor has been developed. A new CNTFET circuit can be developed by using this SPICE model. It can be also used to examine the performance benefits of the newly built transistor. The carbon nanotube field effect transistor SPICE model has been analyzed on the high frequency properties including the persuade of ballistic transport, kinetic inductance and quantum capacitance. The model enables device design and performance optimization for the future generation nano-electronics device modeling.
Keywords :
SPICE; ballistic transport; carbon nanotube field effect transistors; semiconductor device models; CNTFET circuit; ballistic transport; carbon nanotube field effect transistor; device design; device high frequency performance prediction; enhancement mode SPICE circuit model design; high frequency properties; kinetic inductance; nanoelectronics device modeling; performance optimization; quantum capacitance; CNTFETs; Carbon nanotubes; Integrated circuit modeling; Logic gates; Mathematical model; Quantum capacitance; SPICE; carbon nanotube; quantum capacitance; spice model; transistor;
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
DOI :
10.1109/SMELEC.2014.6920830
