• DocumentCode
    114800
  • Title

    Simulation of temperature dependent characterization of charge transport in organic transistor

  • Author

    Shuib, Umar Faruk ; Mohamad, Khairul Anuar ; Saad, Ismail ; Gosh, Bablu Kumar ; Tabet, Tamer A.

  • Author_Institution
    Fac. of Eng., Univ. Malaysia Sabah, Kota Kinabalu, Malaysia
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    205
  • Lastpage
    208
  • Abstract
    In this paper, we present a simulation work in organic transistors using technology computer-aided design (TCAD) Sentaurus tool. A pentacene as an active semiconductor layer is used to simulate and design a top contact structure of p-channel organic transistor. The electrical characterization on these devices was investigated at temperature (T) ranging from 70 to 300 K to estimate the effects of Meyer-Neldel rule (MNR) for charge transport mobility (μMN). In the linear region of output characteristics for T = 70, 100, 140, 180, 220, 260 and 300 K, simulation showed maximum drain current (Ids) for temperature of 70 K is 0.394 μA and for 300 K is 3.54 μA. The transfer characteristics exhibit threshold voltage values ranging from 18.3 to 24.6 V at 70 K to 300 K range, using IEEE1620 Standard. Then, the MNR model reveals low Ea has high μmn of 0.0093 cm2 V1 s-1 at TMN = 208 K, while higher Ea values of 63.8 meV has lower μMN = 0.0034 cm2 V1 s-1, which shows an inverse relationship between Ea and μMN.
  • Keywords
    organic field effect transistors; organic semiconductors; semiconductor device models; technology CAD (electronics); IEEE1620 standard; MNR model; Meyer-Neldel rule model; TCAD; active semiconductor layer; charge transport mobility; electrical characterization; maximum drain current; p-channel organic transistor; pentacene; technology computer-aided design Sentaurus tool; temperature 70 K to 300 K; temperature dependent characterization simulation; top contact structure; voltage 18.3 V to 24.6 V; Logic gates; Manganese; Temperature dependence; Temperature distribution; Threshold voltage; Transistors; Meyer-Neldel Rule model; TCAD; charge transport mobility; linear mobility; organic transistor; temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/SMELEC.2014.6920832
  • Filename
    6920832