Title :
Ultra-low-voltage SOI CMOS inverting driver circuit using effective charge pump based on bootstrap technique
Author :
Chen, J.H.T. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
1/23/2003 12:00:00 AM
Abstract :
A novel SOI CMOS inverting driver circuit is reported using a concise charge pump based on bootstrap technique (CPBT) for ultra-low-voltage (ULV) VLSI applications. The ULV driver with CPBT composed of a bootstrap capacitor, a pre-charge device and a driver device, provides a four times speed improvement as compared to a counterpart circuit using the direct bootstrap technique at an output load of 100 fF operating at 0.5 V.
Keywords :
CMOS integrated circuits; VLSI; bootstrap circuits; driver circuits; equivalent circuits; low-power electronics; silicon-on-insulator; 0.5 V; 100 fF; bootstrap capacitor; bootstrap technique; charge pump; inverting driver circuit; pre-charge device; ultra LV VLSI applications; ultra-low-voltage SOI CMOS;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030148
