Title :
Characterization and analysis of OFET devices based on TCAD simulations
Author :
Kenrow, Julie A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of the Pacific, Stockton, CA, USA
Abstract :
Omega-field-effect transistor (OFET) devices, which feature an undoped cylindrical channel uniformly surrounded by a gate electrode, are investigated in this paper. The study is based on TCAD device simulations of OFETs with gate lengths ranging between 10 and 130 nm and radii ranging between 1 and 65 nm. Device characteristics such as the threshold voltage, the subthreshold swing, the drain saturation, and leakage current as well as drain-induced barrier lowering are discussed as functions of radii and gate lengths. Further, the influence of transversal and longitudinal size quantization effects in OFETs are investigated.
Keywords :
MIS devices; MOSFET; field effect transistors; leakage currents; semiconductor device models; technology CAD (electronics); 1 to 65 nm; 10 to 130 nm; CMOSFETs; MOS devices; OFET devices; TCAD device simulations; drain saturation; gate electrode; leakage current; omega-field-effect transistor devices; quantization effects; semiconductor devices; subthreshold swing; threshold voltage; Analytical models; CMOS technology; Electrodes; FinFETs; MOSFETs; Manufacturing; OFETs; Poisson equations; Quantization; Threshold voltage; CMOSFETs; MOS devices; semiconductor devices; simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.854281
