Channel length effect on the saturation current and the threshold voltages of CNTFET

Author

Ali, Abu Hanifah Muhamad ; Ani, M.H. ; Mohamed, Mahmoud A.

Author_Institution

Dept. of Manuf. & Mater., Int. Islamic Univ., Kuala Lumpur, Malaysia

fYear

2014

fDate

27-29 Aug. 2014

Firstpage

267

Lastpage

269

Abstract

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs´ chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs.

Keywords

carbon nanotube field effect transistors; mechanical strength; CNTFET; ballistic electron transfer capability; carbon nanotubes field effect transistor; channel length effect; chirality; conductivity; direct growth method; electrodes; light weight; mechanical strength; metallic type; microelectronic devices; saturation current; saturation currents; terminal gaps; threshold voltages; voltage 4.291 V; CNTFETs; Electrodes; Ethanol; Resists; Substrates; Threshold voltage; CNTFET; Chirality; Direct Growth Method; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2014 IEEE International Conference on

Conference_Location

Kuala Lumpur

Type

conf

DOI

10.1109/SMELEC.2014.6920848

Filename

6920848