DocumentCode
1148334
Title
Different index contrast silica-on-silicon waveguides by PECVD
Author
Ou, Haiyan
Author_Institution
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
Volume
39
Issue
2
fYear
2003
fDate
1/23/2003 12:00:00 AM
Firstpage
212
Lastpage
213
Abstract
Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode fibres, minimal bend radius, and birefringence, were investigated. The waveguides have good propagation properties and small birefringence, compared to using flame hydrolysis deposition (FHD).
Keywords
birefringence; optical losses; optical waveguides; plasma CVD; refractive index; silicon compounds; sputter etching; Ge-doped silica-on-silicon waveguide; SiO2:Ge-Si; birefringence; coupling loss; index contrast; minimal bend radius; plasma enhanced chemical vapour deposition; propagation loss; reactive ion etching; standard single-mode fibre;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030165
Filename
1179524
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