DocumentCode :
1148367
Title :
100 GHz dynamic frequency divider in SiGe bipolar technology
Author :
Rylyakov, A. ; Klapproth, L. ; Jagannathan, B. ; Freeman, G.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
39
Issue :
2
fYear :
2003
fDate :
1/23/2003 12:00:00 AM
Firstpage :
217
Lastpage :
218
Abstract :
A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM´s 0.12 μm SiGe technology with fT of 207 GHz and fMAX of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM´s 0.18 μm SiGe BiCMOS technology.
Keywords :
Ge-Si alloys; bipolar MIMIC; bipolar logic circuits; emitter-coupled logic; flip-flops; frequency dividers; high-speed integrated circuits; semiconductor materials; -3.8 V; 0.12 micron; 100 GHz; 207 GHz; 285 GHz; 62 GHz; SiGe; SiGe bipolar technology; divider performance; double emitter follower E2CL logic family; dynamic frequency divider; master-slave D-flip-flop circuit; regenerative frequency division approach; single emitter follower ECL logic; static frequency divider; two-latch toggle flip-flop;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030164
Filename :
1179527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1148367
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