Title :
A coplanar waveguide InAlAs/InGaAs HBT monolithic Ku-band VCO
Author :
Kobayashi, K.W. ; Tran, L.T. ; Oki, A.K. ; Block, T. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
An 18 GHz coplanar waveguide (CPW) monolithic voltage controlled oscillator (VCO) has been demonstrated using InAlAs/InGaAs HBT technology. The VCO achieves 6% frequency tuning range using a varactor diode constructed from the HBT base-emitter junction. A CPW design was employed to increase the Q-factor of the monolithic resonator as well as reduce the chip size. The VCO obtains an output power of +10±0.5 dBm over the tuning range and a collector efficiency of 11.5%. A SSB phase noise of -72 and -96 dBc/Hz at 100 kHz and 1 MHz offset frequency from the carrier were achieved, respectively. This represents the first reported phase noise results of an InAlAs/InGaAs-based HBT VCO with a monolithic integrated varactor and are comparable to other MMIC HBT varactor-tuned VCO´s reported in this frequency band
Keywords :
III-V semiconductors; MMIC oscillators; Q-factor; aluminium compounds; bipolar MMIC; circuit tuning; coplanar waveguides; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit noise; phase noise; resonators; varactors; variable-frequency oscillators; voltage-controlled oscillators; 11.5 percent; 18 GHz; CPW design; HBT base-emitter junction; HBT monolithic VCO; InAlAs-InGaAs; Ku-band VCO; MMIC; Q-factor; SHF; coplanar waveguide; frequency tuning range; monolithic integrated varactor; monolithic resonator; phase noise; varactor diode; voltage controlled oscillator; Coplanar waveguides; Diodes; Frequency; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Phase noise; Tuning; Varactors; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
