Title :
All-silicon optoelectronic modulator with 1 GHz switching capability
Author :
Irace, A. ; Breglio, G. ; Cutolo, A.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Naples Univ., Italy
fDate :
1/23/2003 12:00:00 AM
Abstract :
An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a p-i-n diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.
Keywords :
Bragg gratings; distributed Bragg reflectors; electro-optical modulation; electro-optical switches; elemental semiconductors; integrated optoelectronics; optical communication equipment; optical waveguides; p-i-n diodes; rib waveguides; silicon; silicon-on-insulator; 1 to 1.4 GHz; GHz switching capability; OEIC; PIN diode; SOI rib waveguide; Si; absorption coefficient; distributed Bragg reflector; etched Bragg grating; optoelectronic modulator; refractive index; waveguide embedded p-i-n diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030136
