DocumentCode
1148477
Title
All-silicon optoelectronic modulator with 1 GHz switching capability
Author
Irace, A. ; Breglio, G. ; Cutolo, A.
Author_Institution
Dept. of Electron. & Telecommun. Eng., Naples Univ., Italy
Volume
39
Issue
2
fYear
2003
fDate
1/23/2003 12:00:00 AM
Firstpage
232
Lastpage
233
Abstract
An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a p-i-n diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.
Keywords
Bragg gratings; distributed Bragg reflectors; electro-optical modulation; electro-optical switches; elemental semiconductors; integrated optoelectronics; optical communication equipment; optical waveguides; p-i-n diodes; rib waveguides; silicon; silicon-on-insulator; 1 to 1.4 GHz; GHz switching capability; OEIC; PIN diode; SOI rib waveguide; Si; absorption coefficient; distributed Bragg reflector; etched Bragg grating; optoelectronic modulator; refractive index; waveguide embedded p-i-n diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030136
Filename
1179537
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