• DocumentCode
    1148598
  • Title

    MOSFET gate resistance determination

  • Author

    Torres-Torres, R. ; Murphy-Arteaga, R.S. ; Decoutere, S.

  • Author_Institution
    Dept. of Electron. Eng., Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
  • Volume
    39
  • Issue
    2
  • fYear
    2003
  • fDate
    1/23/2003 12:00:00 AM
  • Firstpage
    248
  • Lastpage
    250
  • Abstract
    A simple and reliable method to determine a MOSFET´s gate resistance (Rg) directly from S-parameter measurements is presented. The extracted data agree well with the data predicted by transmission line theory and show that the main contribution of the transistor´s input resistance (Rin) comes from the gate electrode resistance for devices with channel length below 0.2 μm.
  • Keywords
    MOSFET; S-parameters; electric resistance measurement; semiconductor device measurement; semiconductor device models; 0.2 micron; MOSFET gate resistance determination; S-parameter measurements; channel length; gate electrode resistance; simple reliable method; transistor input resistance; transmission line theory;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030124
  • Filename
    1179548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1148598