The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

Author

Cuerdo, R. ; Pei, Y. ; Chen, Z. ; Keller, S. ; DenBaars, S.P. ; Calle, F. ; Mishra, U.K.

Author_Institution

Dept. de Ing. Electron., Univ. Politec. de Madrid, Madrid

Volume

30

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

209

Lastpage

212

Abstract

The kink effect has been studied in deep submicron AlGaN/GaN high-electron mobility transistors by measuring their DC, RF and pulsed performance at cryogenic temperatures. In these devices, the kink effect is mainly due to traps: it appears at T< 260 K and can be removed either by applying UV light or biasing the gate with short pulses. Its appearance is related to the fluorine-based treatment (CF₄/O₂ plasma) used for etching the passivant, treatment which creates traps below and around the gate. This link between the kink and the etching treatment has also been confirmed in optically defined gate devices with different fluorine plasma exposure times.

Keywords

aluminium compounds; carbon compounds; cryogenics; etching; gallium compounds; high electron mobility transistors; oxygen compounds; AlGaN-GaN; CF₄-O₂; UV light; cryogenic temperatures; deep submicron HEMT; etching treatment; fluorine-based treatment; gate biasing; kink effect; Cryogenic temperatures; fluorine treatment; gallium nitride; high-electron mobility transistors (HEMTs); kink effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2011289

Filename

4776482