DocumentCode :
114883
Title :
Effects of annealing temperature on dielectric property of nano-films lead titanate prepared on ITO glass by spin coating method
Author :
Nurbaya, Z. ; Affendi, I.H.H. ; Azhar, N.A. ; Wahid, M.H. ; Rusop, M.
Author_Institution :
NANO-Electron. Centre (NET), Univ. Teknol. Malaysia (UiTM), Shah Alam, Malaysia
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
373
Lastpage :
376
Abstract :
Thin films capacitor is one of the most potential devices for storage application. This study managed to perform high performance thin films fabrication through low cost spin coating method and prepared at low annealing temperatures. On top of that, the role of substrate is also being discussed in order to improve the dielectric and ferroelectric property of the nano-thickness thin films. As in our study, ITO coated glass substrate is very suitable compared to ordinary soda lime glass substrate. It was found that the optimal dielectric permittivity, ε is about 150 for the thin films prepared by 500 C annealing temperature measured at 1 kHz frequency. A 199-nm thin film was obtained by two cycles of coating/heating process. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) showed the surface of these films to be high densification with low surface roughness (ra=0.318 nm). It is believed that high electrical properties are attributed to the microstructural property by which homogenous interfacial layer between films and electrode base.
Keywords :
annealing; atomic force microscopy; ceramics; crystal microstructure; densification; dielectric thin films; field emission electron microscopy; heat treatment; lead compounds; nanostructured materials; permittivity; scanning electron microscopy; spin coating; surface roughness; AFM; FESEM; ITO coated glass substrate; ITO-SiO2; PbTiO3; annealing; atomic force microscopy; densification; dielectric permittivity; dielectric property; electrical properties; electrode base; field emission scanning electron microscopy; frequency 1 kHz; heating process; homogenous interfacial layer; lead titanate nanothin films; microstructural property; size 199 nm; spin coating method; surface roughness; temperature 500 degC; Annealing; Coatings; Dielectrics; Films; Glass; Temperature measurement; Titanium compounds; annealing temperature; dielectric property; lead titanate; thin films processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Type :
conf
DOI :
10.1109/SMELEC.2014.6920875
Filename :
6920875
Link To Document :
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