Title :
MNOS memory technology with oxynitride thin films
Author :
Kapoor, Vik J. ; Turi, R.A. ; Xu, Dan ; Bailey, Robert S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
9/1/1994 12:00:00 AM
Abstract :
Memory properties of a metal-oxynitride-oxide-silicon (MNOS) device were investigated as a function of amount of oxygen and hydrogen impurities in the oxynitride films. The retention and endurance device characteristics improved by 60% and 107 to 108 cycles, respectively, as 13% oxygen was introduced in the oxynitride film. The interface state density decreased from 5.1 to 3.65×10 11 cm-2 eV-1, with an increase of approximately 21% oxygen in the oxynitride film, and further decreased to 2.1×1011 cm2 eV6-1 after hydrogen annealing. The results indicate that the nonvolatile memory properties of MNOS devices can be altered and considerably improved by incorporating oxygen in the oxynitride film and selecting appropriate processing and annealing conditions
Keywords :
annealing; dielectric thin films; impurities; interface electron states; metal-insulator-semiconductor structures; semiconductor storage; H impurities; H2 annealing; MNOS memory technology; O impurities; SiON; endurance characteristics; interface state density; memory properties; nonvolatile memory properties; oxynitride thin films; retention characteristics; Annealing; Hydrogen; Impurities; Interface states; Nonvolatile memory; Semiconductor films; Semiconductor thin films; Silicon; Thin film devices; Transistors;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
