DocumentCode :
1148941
Title :
Modeling of RF filter component based on film bulk acoustic resonator
Author :
Zhao, Shi-Heng ; Dong, Shu-rong ; Zhang, Hui-Jin ; Cheng, Wei-Wei ; Han, Xiao-Xia
Author_Institution :
Zhejiang Univ., Hangzhou, China
Volume :
55
Issue :
2
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
351
Lastpage :
355
Abstract :
Film bulk acoustic resonator (FBAR) is widely used as an individual component RF filter in RF circuit because of its very high Q factor and low temperature coefficient. However, the RF pads and bonding wires of FBAR component will lower its Q factor. This effect is modeled by a new model named as PMBVD based on the traditional modified Butterworth-Van Dyke (MBVD) model in this paper. PMBVD model can describe FBAR individual component more exactly than MBVD model, especially near FBAR operating frequency, as proved by test results. The influences by different kinds of RF pads are also analyzed based on PMBVD. The simulations based on PMBVD show that optimized RF pads can enhance whole device Q factor to meet demands.
Keywords :
Butterworth filters; Q-factor; acoustic filters; acoustic resonators; bulk acoustic wave devices; radiofrequency filters; RF circuit; RF filter component modelling; bonding wires; film bulk acoustic resonator; low temperature coefficient; modified Butterworth-Van Dyke model; very high Q-factor; Bonding; Circuits; Film bulk acoustic resonators; Levee; Q factor; Radio frequency; Resonator filters; Temperature; Testing; Wires; FBAR modeling, MBVD, RF PADS, FBAR; filter;
fLanguage :
English
Journal_Title :
Consumer Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-3063
Type :
jour
DOI :
10.1109/TCE.2009.5174392
Filename :
5174392
Link To Document :
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