DocumentCode
1149489
Title
Nondestructive Characterization of RBSOA of High-Power Bipolar Transistors
Author
Jovanovic, Milan M. ; Lee, Fred C. ; Chen, Dan Y.
Issue
2
fYear
1986
fDate
3/1/1986 12:00:00 AM
Firstpage
138
Lastpage
145
Abstract
Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.
Keywords
Aerospace testing; Bipolar transistors; Circuit testing; Electric breakdown; Manufacturing; Nondestructive testing; Performance evaluation; Switches; Temperature; Voltage;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.1986.310748
Filename
4104193
Link To Document