• DocumentCode
    114959
  • Title

    Effects of thermal cycling on the mechanical properties of gold wire bonding

  • Author

    Yusoff, Wan Yusmawati Wan ; Jalar, A. ; Othman, Norinsan Kamil ; Rahman, Irman Abdul

  • Author_Institution
    Inst. of Microeng. & Nanoelectron., Univ. Kebangsaan Malaysia, Bangi, Malaysia
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    521
  • Lastpage
    524
  • Abstract
    The mechanical properties of gold wire bonding are subjected to thermal cycling (TC) test has been investigated. Gold wire bonding was experienced to temperature cycle of (-65) °C to 150 °C for 10, 100, and 1000 cycles. In order to determine the mechanical properties of gold wire, nanoindentation test was performed. A constant load nanoindentation test was carried out at the center of the gold wire to investigate hardness and reduced modulus. The load-depth curve for the thermal cycled gold wire bond displayed apparent discontinuities during loading as compared to the as-received gold wire bond. The hardness value has increased after the gold wire bond subjected to thermal cycle whilst, the hardness value has decreased with the increment of the TC cycle number. For reduced modulus, the values increased with increase of the TC cycle number. The decrease in the hardness value is in line with theoretical grain size coarsening following thermal treatment. These nanoindentation results are important in assessing the strength of gold wire bond after exposure to the thermal cycles.
  • Keywords
    gold; lead bonding; mechanical properties; Au; TC test; constant load nanoindentation test; cycle number; grain size coarsening following thermal treatment; hardness value; load-depth curve; mechanical properties; modulus reduction; temperature -65 degC to 150 degC; thermal cycling; wire bonding; Bonding; Electronic packaging thermal management; Gold; Materials; Mechanical factors; Temperature; Wires; gold wire; micromechanical properties; nanoindentation; thermal cycle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2014 IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Type

    conf

  • DOI
    10.1109/SMELEC.2014.6920913
  • Filename
    6920913